Supply and Commissioning of an Inductively Coupled Plasma Etcher

The Institute of Photonics is seeking to complement their cleanroom micro-fabrication facility equipment with an Inductively Coupled Plasma Etcher system The Technical Team envision that the equipment will process semiconductor materials that will include but not be limited to: 1 Gallium Nitride (GaN) light-emitting diodes 2 Silicon (Si) passive and active devices The equipment will be used to advance scientific investigation in neuro-technology and operated by PhD students, Postdoctoral Research Associates and Technicians within the Institute of Photonics. The Contracting Authority anticipates that the contract will be for a duration of twenty (24) months. The Contracting Authority requires a supplier that can fulfil the below non-exhaustive list of requirements: 1 Inductively Coupled Plasma Reactive Ion Etching (ICP-RIE) mode of operation to plasma etch hard materials such as GaN at etch rate of >500nm/min 2 Deep Silicon Etching (DSE) mode of operation to plasma etch high aspect ratio and high-density structures in Silicon at etch rate of >1000nm/min 3 These two modes of operation co-existing within the same equipment within a minimal footprint 4 Low-maintenance, especially with the provision of servicing-free high vacuum pumping systems (magnetic-levitated turbo molecular pump) Please refer to the full technical and tender information available in the Public Contracts Scotland-Tender.